首页 > 器件类别 > 分立半导体 > 晶体管

CSC2712G

silicon planar epitaxial transistor

器件类别:分立半导体    晶体管   

厂商名称:CDIL[Continental Device India Pvt. Ltd.]

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
CDIL[Continental Device India Pvt. Ltd.]
包装说明
,
Reach Compliance Code
compliant
最大集电极电流 (IC)
0.15 A
配置
Single
最小直流电流增益 (hFE)
200
JESD-609代码
e0
最高工作温度
150 °C
极性/信道类型
NPN
最大功率耗散 (Abs)
0.15 W
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
标称过渡频率 (fT)
80 MHz
文档预览
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
CSC2712
SILICON PLANAR EPITAXIAL TRANSISTOR
N-P-N transistor
Marking
CSC2712Y=1E
CSC2712GR(G)=1F
CSC2712BL(L)=1G
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (peak value)
Total power dissipation at T
amb
= 25°C
Junction temperature
D.C. current gain
–I
C
= 2 mA; –V
CE
= 6V
Transition frequency
I
C
= 1 mA; V
CE
= 10 V
Noise figure at R
S
= 10 KW
I
C
= 0.1 mA; V
CE
= 6V;
f = 1 kHz
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
h
FE
max.
max.
max.
max.
max.
max.
min.
max.
min.
60
50
5
150
150
150
70
700
V
V
V
mA
mW
°C
f
T
80 MHz
F
max
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 3
CSC2712
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.)
Base current
Total power dissipation at T
amb
= 25°C
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
Tstg
max.
60
max.
50
max.
5
max.
150
max.
30
max.
150
max.
150
–50 to +150
V
V
V
mA
mA
mW
°C
°C
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector cut-off current
I
CBO
I
E
= 0; V
CB
= 60 V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Saturation voltage
I
C
= 100 mA; I
B
= 10 mA
D.C. current gain
I
C
= 2 mA; V
CE
= 6 V
I
EBO
V
CEsat
h
FE
Y
GR(G)
BL(L)
max.
max.
max.
min.
max.
min.
max.
min.
max.
min.
max.
100 nA
100 nA
250 mV
70
700
120
240
200
400
350
700
Transition frequency
I
C
= 1 mA; V
CE
= 10 V
Noise figure at R
g
= 10 kW
V
CE
= 6 V; I
C
= 0.1 mA
f = 1 kHz
f
T
min.
80 MHz
N
F
max.
10 dB
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
查看更多>
参数对比
与CSC2712G相近的元器件有:CSC2712L、CSC2712BLL、CSC2712BL、CSC2712Y、CSC2712GRG。描述及对比如下:
型号 CSC2712G CSC2712L CSC2712BLL CSC2712BL CSC2712Y CSC2712GRG
描述 silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor
是否Rohs认证 不符合 不符合 - 符合 符合 -
厂商名称 CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] - CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] -
Reach Compliance Code compliant compliant - compliant compliant -
最大集电极电流 (IC) 0.15 A 0.15 A - 0.15 A 0.15 A -
配置 Single Single - Single SINGLE -
最小直流电流增益 (hFE) 200 350 - 350 120 -
最高工作温度 150 °C 150 °C - 150 °C 150 °C -
极性/信道类型 NPN NPN - NPN NPN -
最大功率耗散 (Abs) 0.15 W 0.15 W - 0.15 W 0.15 W -
表面贴装 YES YES - YES YES -
标称过渡频率 (fT) 80 MHz 80 MHz - 80 MHz 80 MHz -
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消